Recent Developments on MnN for Spintronic Applications

There is significant interest worldwide to identify new antiferromagnetic materials suitable for device applications. Key requirements such are: relatively high magnetocrystalline anisotropy constant, low cost, corrosion resistance and the ability induce a large exchange bias, i.e., loop shift, when grown adjacent ferromagnetic layer. In this article, review of recent developments on novel material MnN presented. This shows potential as replacement commonly used antiferromagnet choice, IrMn. Although results so far look promising, further work required optimization material.